Search results for "Flame Detection"

showing 3 items of 3 documents

Internal photoemission in solar blind AlGaN Schottky barrier photodiodes

2005

We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increase linearly with the band gap energy of the AlGaN alloy. The amplitude of the internal photoemission signal is about 20 times smaller than the value given by the Fowler theory based on a free electron model. We explain this result by taking into account the interband transitions and the ballistic transport of photoexcited electrons in the metal. This low value of internal photoemission allows us to achieve a spectral rejection ratio betwee…

Free electron modelMaterials scienceFLAME DETECTIONPhysics and Astronomy (miscellaneous)business.industryBand gapSchottky barrierInverse photoemission spectroscopyPhotodetectorsWide-bandgap semiconductorSchottky diodeultraviolet photodetectorsGallium nitridePERFORMANCEFILMSPhotodiodelaw.inventionHEIGHTlawBallistic conductionOptoelectronicsHOT-ELECTRONSbusinessApplied Physics Letters
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Solar blind AlGaN photodetectors with a very high spectral selectivity

2006

Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.

Interference filterMaterials scienceFLAME DETECTIONbusiness.industryDetectorPhotodetectorsPHOTODIODESPhotodetectorSchottky diodeultraviolet photodetectorsHeterojunctionGallium nitrideSemiconductor deviceCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsPhotodiodelaw.inventionOpticslawOptoelectronicsDETECTIVITYbusinessInstrumentationMolecular beam epitaxy
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Solar blind detectors based on AlGaN grown on sapphire

2005

Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…

SiliconMaterials sciencebusiness.industryFlame DetectionPhotodetectorsSchottky diodePhotodetectorHeterojunctionultraviolet photodetectorsChemical vapor depositionGallium nitrideSettore ING-INF/01 - ElettronicaPhotodiodelaw.inventionResponsivitylawSapphireDetectivityOptoelectronicsSolar-blind detector UV detector AlGaNbusinessPhotodiodesMolecular beam epitaxyFilms
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